The Properties of Nitrogen Doped Graphene


The Properties of Nitrogen Doped Graphene

Nitrogen Doped Graphene exhibits remarkable electrical properties. It is a single-crystalline p-n junction with two to five atomic layers. This materi

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Nitrogen Doped Graphene exhibits remarkable electrical properties. It is a single-crystalline p-n junction with two to five atomic layers. This material exhibits high intensity of the D + D’ band and Shubnikov-de Haas oscillations.

Graphene is a single-crystalline p-n junction

Nitrogen doping of graphene is a way to modify the electronic properties of the material by altering its interactions with molecular species. The process has been used in electrochemical sensing and catalysis. Nitrogen-doped graphene has also been studied using scanning probe microscopy. It is known that graphene undergoes local charge transfer and downshift at nitrogen sites.

The N-doped graphene was then transferred to a silicon substrate for transport experiments. The N-doped graphene exhibited an increased inter-valley scattering length. Furthermore, the WL was also enhanced in this material.

Carbon-based graphene is a two-sided carbon material with a high specific surface area. Its surface area is approximately 2630 m2/g, whereas carbon nanotubes and carbon black typically have a 100-1000 m2/g surface area. Graphene is the only form of carbon that exhibits chemical reactivity on both sides. This is due to its edge atoms, which are characterized by a unique chemical reactivity. In addition, there are defects within the sheet that enhance the reactivity of graphene.

A graphene substrate may be placed on a base substrate, such as graphite, which is a non-carbon compound. A second dopant species may also be disposed on the graphene substrate. The two dopant species may be the same or different, and may be amorphous or chemically bonded to the graphene substrate.

It has 2-5 atomic layers

Nitrogen Doped Graphene (NDG) is a material with two to five atomic layers. It was synthesized by functionalizing graphene oxide with various oxygen groups. X-ray diffraction and TEM analysis revealed that a typical N-doped graphene sheet has between two to five atomic layers. Raman spectroscopy also revealed the structure of the N-doped sheets.

Nitrogen Doped Graphene can be prepared in two ways. First, the nitrogen atoms can be added through a chemical vapor deposition process. During this process, a nitrogen-containing chemical, such as ammonia, is used as a precursor. After that, a post-growth treatment can be applied to incorporate the nitrogen into the graphene lattice.

Nitrogen-doped graphenes exhibit enhanced electrochemical behavior. In particular, nitrogen-doped graphenes are capable of improving electrical conductivity and electro-catalytic activity. This property makes them potentially suitable for energy devices and electrochemical sensors.

In addition, doped graphene has numerous applications, including solar cells, photodetectors, and light-emitting diodes. The study also discusses future research in this field. If the benefits of doped graphene can be fully realized, they could be used in the field of medical diagnostics.

The N-doped graphene samples were characterized by XRD, Raman spectroscopy, and FTIR. Using these techniques, the researchers were able to determine the number of layers, interlayer distance, and the size of the graphene crystallites. They also identified the types of functionalities attached to the surface of the graphene.

It exhibits Shubnikov-de Haas oscillations

One of the most well-known magneto-oscillations is the Shubnikov-de Haaas (SdH) oscillation. These oscillations are caused by the quantization of electron energy levels in the presence of magnetic fields. These oscillations can be measured with the use of scanning tunneling spectroscopy. Using this technique, researchers are able to measure SdH oscillations in graphene systems. This technique also allows them to measure Berry phases and energy-momentum dispersions.

This property is due to the Shubnikov-de HaaS effect, or SdH, which causes quantum oscillations in graphene. The effect evolves into a quantum Hall effect (QHE) in graphene. The onset of QHE in graphene is controlled by gate bias and temperature, and the frequency and amplitude of SdH oscillations is sensitive to the gate bias.

Graphene displays Shubnikov-de HaaS oscillations when a voltage is applied to its surface. This voltage controls the concentration of carrier molecules in Si-MOSFETs. Its gate voltage can be swept while a magnetic field is present.

It exhibits high intensity of D + D’ band

In this study, researchers have discovered that the D + D’ band in nitrogen doped carbon films has a high intensity and is remarkably robust to doping levels. It was found that the doping level is 300 meV, and the D + D’ band has a high intensity under analogous conditions.

Nitrogen doping changes the electrochemical and structural properties of graphene. It modulates the electrical conductivity, surface catalytic properties, and local chemical features, which greatly enhances the functionality and performance of the material. It also increases the free charge-carrier density. Various routes are being developed to synthesize N-doped graphene materials. Most of these methods require high temperatures and are time-consuming.

The XPS spectra of nitrogen doped graphene at 1000 and 1070 degC showed evidence of nitrogen. However, the signal-to-noise ratio was not high enough to evaluate the N/C content and the binding components. Thus, we cannot determine the presence of nitrogen univocally.

Raman spectroscopy was also used to investigate the structural changes caused by nitrogen doping. The spectra showed two broad peaks at 1350 cm-1 (D peak) and 1590 cm-1 (G peak), which are generated by sp2 C ring and sp2 bonds, respectively. These two peaks are red-shifted from rGO to N-rGO.

It can be used as a sensing material

The doping of graphene with nitrogen enhances the charge carrier density and electronegativity of the material. It has been used in biosensors for anticancer drugs, gas sensors, and supercapacitors. Researchers are now exploring its use as a glucose sensor. The determination of blood glucose concentration is critical to diabetes treatment.

The process for preparing N-doped graphene is a hydrothermal method. First, a dispersion of graphene oxide (GO) is prepared. Then, 20 mL of an ammonia solution (25%) is added to the dispersed GO. Next, a Teflon-lined autoclave is placed in a drying oven at 200 degC for 24 h. The reacted solution is then allowed to cool naturally to room temperature. Afterwards, the sample is washed with ethanol or distilled water.

Graphene is a material that can detect traces of pollutants in a solution. To develop a sensing material, it must be stable enough to withstand adsorption of pollutants. The sensor should also be able to detect changes in gas concentration over a wide range of concentrations.

Graphene sensors can detect both NH3 and NO2. The adsorbed molecules change the graphene’s electronic structure and result in a change in the current. These sensors were tested at fixed Vds and 1 mV. The detection threshold for NO2 is eight ppb with a signal-to-noise ratio of 9.4.

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